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| 1719-35 35 Watt - 28 Volts, Class C Microwave 1725 - 1850 MHz Preliminary Issue GENERAL DESCRIPTION The 1719-35 is a COMMON BASE transistor capable of providing 35 Watts of Class C, RF output power over the band 1725 -1850 MHz. This transistor is designed for Microwave Broadband Class C, HIGH EFFICIENCY amplifier applications. It includes Input and Output prematching and utilizes Gold metalization and diffused ballasting to provide high reliability and supreme ruggedness. The transistor uses a Low Inductance Flange Mount, Ceramic sealed package. CASE OUTLINE 55AR, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 97 Watts 50 Volts 3.5 Volts 12 A - 65 to + 150 oC + 200 oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL Pout Pin Pg CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance TEST CONDITIONS F = 1725 -1850 MHz Vcb = 28 Volts Pin = 6.23 Watts As Above F = 1850MHz, Pin = 6.23W MIN 35 6.23 7.5 45 8.0 50 4.5:1 TYP MAX UNITS Watt Watt dB % c VSWR1 BVces BVebo HFE Cob jc Collector to Emitter Breakdown Emitter to Base Breakdown Current Gain Output Capacitance Thermal Resistance Ic = 20 mA Ie = 15 mA Vce = 5 V, Ic = 1 A F = 1 MHz, Vcb = 28V 50 3.5 10 Volts Volts 100 1.8 o pF C/W 72045 Initial Issue April 1996 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 1719-35 Initial Issue Apr 1996 |
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